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Author: D. K. Roy
Publisher: Elsevier
ISBN: 1483278956
Category : Technology & Engineering
Languages : en
Pages : 230
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Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
Author: D. K. Roy
Publisher: Elsevier
ISBN: 1483278956
Category : Technology & Engineering
Languages : en
Pages : 230
Get Book
Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
Author: Dilip K Roy
Publisher: Universities Press
ISBN: 9788173714948
Category : Amorphous semiconductors
Languages : en
Pages : 492
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Book Description
Author: Sylvester P. Gentile
Publisher:
ISBN:
Category : Tunnel diodes
Languages : en
Pages : 322
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Book Description
Author: Stig Lundqvist
Publisher: World Scientific
ISBN: 9789810207274
Category : Science
Languages : en
Pages : 622
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Book Description
These volumes are collections of the Nobel Lectures delivered by the prizewinners, together with their biographies, portraits and the presentation speeches for the period 1971 ? 1990. Each Nobel Lecture is based on the work that won the laureate his prize. New biographical data of the laureates, since they were awarded the Nobel Prize, are also included. These volumes of inspiring lectures by outstanding physicists should be on the bookshelf of every keen student, teacher and professor of physics as well as those in related fields.Below is a list of the prizewinners during the period 1971?1980 with a description of the works which won them their prizes: (1971) D GABOR ? for his invention and development of the holographic method; (1972) J BARDEEN, L N COOPER & J R SCHRIEFFER ? for their jointly developed theory of superconductivity, usually called the BCS-theory; (1973) L ESAKI & I GIAEVER ? for their experimental discoveries regarding tunneling phenomena in semiconductors and superconductors, respectively; B D JOSEPHSON ? for his theoretical predictions of the properties of a supercurrent through a tunnel barrier, in particular those phenomena which are generally known as the Josephson effects; (1974) M RYLE & A HEWISH ? for their pioneering research in radio astrophysics: Ryle for his observations and inventions, in particular of the aperture synthesis technique, and Hewish for his decisive role in the discovery of pulsars; (1975) A BOHR, B MOTTELSON & J RAINWATER ? for the discovery of the connection between collective motion and particle motion in atomic nuclei and the development of the theory of the structure of the atomic nucleus based on this connection; (1976) B RICHTER & S C C TING ? for their pioneering work in the discovery of a heavy elementary particle of a new kind; (1977) P W ANDERSON, N F MOTT & J H VAN VLECK ? for their fundamental theoretical investigations of the electronic structure of magnetic and disordered systems; (1978) P L KAPITSA ? for his basic inventions and discoveries in the area of low-temperature physics; A A PENZIAS & R W WILSON ? for their discoveries of cosmic microwave background radiation; (1979) S L GLASHOW, A SALAM & S WEINBERG ? for their contributions to the theory of the unified weak and electromagnetic interaction between elementary particles, including inter alia the prediction of the weak neutral current; (1980) J W CRONIN & V L FITCH ? for the discovery of violations of fundamental symmetry principles in the decay of neutral K-mesons.
Author: I. M. Tsidilkovski
Publisher: Elsevier
ISBN: 1483157865
Category : Science
Languages : en
Pages : 416
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Book Description
Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillations, magnetophonon resonance, and magneto-optical phenomena are discussed. Experimental physicists, theoretical physicists, students and research workers, and engineers working in the field of semiconductor electronics will find this book a great source of vital information.
Author: Juras Pozhela
Publisher: Elsevier
ISBN: 1483189384
Category : Science
Languages : en
Pages : 318
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Book Description
Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.
Author: Institution of Electrical Engineers
Publisher: IET
ISBN: 9780863412042
Category : Science
Languages : en
Pages : 330
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Book Description
This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Author: Emil Zolotoyabko
Publisher: John Wiley & Sons
ISBN: 3527831592
Category : Science
Languages : en
Pages : 304
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Book Description
A concise, accessible, and up-to-date introduction to solid state physics Solid state physics is the foundation of many of today's technologies including LEDs, MOSFET transistors, solar cells, lasers, digital cameras, data storage and processing. Introduction to Solid State Physics for Materials Engineers offers a guide to basic concepts and provides an accessible framework for understanding this highly application-relevant branch of science for materials engineers. The text links the fundamentals of solid state physics to modern materials, such as graphene, photonic and metamaterials, superconducting magnets, high-temperature superconductors and topological insulators. Written by a noted expert and experienced instructor, the book contains numerous worked examples throughout to help the reader gain a thorough understanding of the concepts and information presented. The text covers a wide range of relevant topics, including propagation of electron and acoustic waves in crystals, electrical conductivity in metals and semiconductors, light interaction with metals, semiconductors and dielectrics, thermoelectricity, cooperative phenomena in electron systems, ferroelectricity as a cooperative phenomenon, and more. This important book: Provides a big picture view of solid state physics Contains examples of basic concepts and applications Offers a highly accessible text that fosters real understanding Presents a wealth of helpful worked examples Written for students of materials science, engineering, chemistry and physics, Introduction to Solid State Physics for Materials Engineers is an important guide to help foster an understanding of solid state physics.
Author: D Roy
Publisher: World Scientific
ISBN: 981451361X
Category : Tunneling (Physics)
Languages : en
Pages : 400
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Book Description
This book presents a new approach to quantum mechanical tunnelling and its applications to various fields of physics. The conventional concepts of this phenomenon, which are based on a time-dependent or time-independent approach, are inadequate in providing explanations for 1) the limit of resolution of field-emission microscope, 2) the Esaki-Integral representation the tunnelling I-V characteristics of tunnel diodes, 3) the Josephson effect, 4) the tunnelling time, etc. The new theory presented here not only provides adequate explanation for all the above-mentioned effects but also gives an accurate expression for tunnelling current density which predicts results closer to the experimentally observed values. The new presentation also provides a more comprehensive description of the results obtained using older treatment. Contents:Quantum Mechanical Tunnelling:Conventional Formulations of the Tunnelling ProblemInadequacies of Conventional Tunnelling FormulationsA Recent Application of TunnellingThe New Tunnelling Theory:The Barrier Hamiltonian and the Wave FunctionThe Tunnelling Probability and Tunnelling TimeThe Tunnelling Current DensityThe Theory of Indirect TunnellingTunnelling in Rectangular Barrier Systems:Metal-Insulator-Metal (MIM) JunctionMetal-Insulator-Semiconductor (MIS) JunctionMetal-Insulator-Semiconductor Switch (MISS)Normal Metal-Insulator-Superconductor (NIS) JunctionSuperconductor-Insulator-Superconductor (S1-I-S2) JunctionJosephson EffectThe Semiconductor HeterostructuresTunnelling in Triangular Barrier Systems:Metal-Vacuum BoundaryMetal-Semiconductor Contact (Schottky Barrier)Semiconductor pn JunctionsSemiconductor HeterojunctionsSuper Schottky Junction Readership: Solid state physicists and device engineers. Keywords:Esaki-Integral Representation;Josephson Effect;Quantum Mechanical Tunnelling;Tunnelling Theory;Rectangular Barrier Systems;Triangular Barrier SystemsReview: “This text will become an eyeopener to most of the teachers, mainly to those in universities, in understanding the essential contribution of the new tunnel effect and in explaining it so as to be clearly appreciated by the average student.” B S V Gopalam Indian Journal of Pure & Applied Physics, 1987
Author: Bandyopadhyay, Jyoti Prasad
Publisher: Vikas Publishing House
ISBN: 9352711688
Category : Technology & Engineering
Languages : en
Pages :
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Book Description
Devices has been written for the undergraduate students of Electronics and Electrical Engineering. The book caters to introductory and advance courses on Solid State Devices. It is student-friendly and written for those who like to understand the subject from a physical perspective. Even teachers and researchers will benefit immensely from this book. This thoughtfully-organized book provides intense knowledge of the subject with the help of lucid descriptions of theories and solved examples and covers the syllabus of most of the colleges under WBUT.
