Semiconductor Quantum Well Intermixing PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Semiconductor Quantum Well Intermixing PDF full book. Access full book title Semiconductor Quantum Well Intermixing by J. T. Lie. Download full books in PDF and EPUB format.
Author: J. T. Lie
Publisher: CRC Press
ISBN: 9789056996895
Category : Science
Languages : en
Pages : 716
Get Book
Book Description
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Author: J. T. Lie
Publisher: CRC Press
ISBN: 9789056996895
Category : Science
Languages : en
Pages : 716
Get Book
Book Description
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Author: J. T. Lie
Publisher: CRC Press
ISBN: 1482283344
Category : Science
Languages : en
Pages : 695
Get Book
Book Description
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Author: E. Herbert Li
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Photonics
Languages : en
Pages : 634
Get Book
Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Author:
Publisher: Academic Press
ISBN: 9780080864433
Category : Technology & Engineering
Languages : en
Pages : 316
Get Book
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566773362
Category : Technology & Engineering
Languages : en
Pages : 344
Get Book
Book Description
Author: Chua Soo-Jin
Publisher: CRC Press
ISBN: 1000083195
Category : Science
Languages : en
Pages : 290
Get Book
Book Description
This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Author: Vitchanetra Hongpinyo
Publisher:
ISBN: 9781124192321
Category :
Languages : en
Pages : 205
Get Book
Book Description
Quantum well intermixing (QWI), a postgrowth bandgap engineering technology, has been viewed as a promising method for semiconductor photonics integrated circuits (PICs). In this research, we investigated a novel intermixing process that yields large bandgap blueshift at low activation energy in various quantum well and dot structures using metallic impurity induced disordering technique. Large bandgap selectivity and high intermixed material quality have also been observed from GaAs-based quantum well nanostructures. Impurity-free vacancy induced disordering (IFVD), Cu:SiO2 intermixing and nitrogen (N) ion-implantation induced disordering (N-IID) have been performed to promote the efficient group-III intermixing in InP-based quantum dash laser structure. Using Cu:SiO2 and N-IID to promote universal intermixing on dash-inwell InP-based laser structure, up to a maximum bandgap shift of 208 nm (115 meV) and 193 nm (106 meV) were observed from the Cu:SiO2 and N-IIID intermixed samples, respectively.
Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Electronic books
Languages : en
Pages : 238
Get Book
Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 9789056995676
Category : Science
Languages : en
Pages : 606
Get Book
Book Description
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Author: Hui C. Liu
Publisher: Springer Science & Business Media
ISBN: 9401111448
Category : Technology & Engineering
Languages : en
Pages : 573
Get Book
Book Description
Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.
