Proceedings of the Third International Symposium on Defects in Silicon PDF Download
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Author: Takao Abe
Publisher: The Electrochemical Society
ISBN: 9781566772235
Category : Science
Languages : en
Pages : 548
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Book Description
Author: Takao Abe
Publisher: The Electrochemical Society
ISBN: 9781566772235
Category : Science
Languages : en
Pages : 548
Get Book
Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 800
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Book Description
Author: Peter J. Hesketh
Publisher: The Electrochemical Society
ISBN: 9781566771320
Category : Science
Languages : en
Pages : 234
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Book Description
Author: Howard R. Huff
Publisher: The Electrochemical Society
ISBN: 9781566771931
Category : Technology & Engineering
Languages : en
Pages : 894
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Book Description
Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 9781566772075
Category : Science
Languages : en
Pages : 498
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Book Description
Author: W. Murray Bullis
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 716
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Book Description
Author: C. E. Hunt
Publisher:
ISBN: 9781566771016
Category : Technology & Engineering
Languages : en
Pages : 628
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Book Description
Author: G. R. Srinivasan
Publisher: The Electrochemical Society
ISBN: 9781566771542
Category : Science
Languages : en
Pages : 546
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Book Description
Author: John P. Dismukes
Publisher: The Electrochemical Society
ISBN: 9781566770606
Category : Nature
Languages : en
Pages : 1126
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Book Description
Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586648
Category : Science
Languages : en
Pages : 436
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Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
