Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 PDF Author: Zia Karim
Publisher: The Electrochemical Society
ISBN: 1566778646
Category : Science
Languages : en
Pages : 546

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Book Description
This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 PDF Author: Zia Karim
Publisher: The Electrochemical Society
ISBN: 1566778646
Category : Science
Languages : en
Pages : 546

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Book Description
This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 PDF Author:
Publisher:
ISBN: 9781607682141
Category : Dielectric devices
Languages : en
Pages : 532

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Book Description


High Mobility and Quantum Well Transistors

High Mobility and Quantum Well Transistors PDF Author: Geert Hellings
Publisher: Springer Science & Business Media
ISBN: 9400763409
Category : Technology & Engineering
Languages : en
Pages : 154

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Book Description
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 4

Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 4 PDF Author:
Publisher:
ISBN: 9781607683148
Category :
Languages : en
Pages :

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Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4

Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4 PDF Author: Electrochemical Society
Publisher: ECS Transactions
ISBN: 9781566779562
Category :
Languages : en
Pages : 242

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Book Description
This issue of ECS Transactions covers emerging electronic materials and concepts, including but not limited to, beyond CMOS integration schemes/technology development and on the impact of nontraditional materials such as optical, laser, RF, and other non-conventional devices in nanoelectronics. Topics include grapheme material properties, preparation, synthesis, and growth; Ge and SiGe devices for PMOS mobility enhancement for next generation CMOS and other devices beyond strain engineering, III-V heterostructures on Si substrates.

Graphene and Emerging Materials for Post-CMOS Applications

Graphene and Emerging Materials for Post-CMOS Applications PDF Author: Yaw Obeng
Publisher: The Electrochemical Society
ISBN: 1566777135
Category : Graphene
Languages : en
Pages : 421

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Book Description
The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.

Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2

Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2 PDF Author: Purushothaman Srinivasan
Publisher:
ISBN: 9781607681458
Category :
Languages : en
Pages : 247

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Book Description


Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing

Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing PDF Author: D. Misra
Publisher: The Electrochemical Society
ISBN: 1566776279
Category : Dielectrics
Languages : en
Pages : 419

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Book Description
This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -And- Tutorials in Nanotechnology

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -And- Tutorials in Nanotechnology PDF Author: Electrochemical Society
Publisher: ECS Transactions
ISBN: 9781566779555
Category :
Languages : en
Pages : 598

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Book Description
This issue will cover papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems. Beyond CMOS device structures and properties of semiconductor nanoelectronics will also be included.

Dielectrics for Nanosystems II

Dielectrics for Nanosystems II PDF Author: D. Misra
Publisher: The Electrochemical Society
ISBN: 1566774381
Category : Dielectrics
Languages : en
Pages : 352

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Book Description
This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.