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Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
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Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
Get Book
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Yoshio Nishi
Publisher: Woodhead Publishing
ISBN: 0081025858
Category : Science
Languages : en
Pages : 662
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Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author: S. N. Piramanayagam
Publisher: John Wiley & Sons
ISBN: 1118096827
Category : Computers
Languages : en
Pages : 348
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Book Description
A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.
Author: Hsu Charles Ching-hsiang
Publisher: World Scientific
ISBN: 9814460923
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Hai Li
Publisher: CRC Press
ISBN: 1351834193
Category : Computers
Languages : en
Pages : 207
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Book Description
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
Author: S. N. Piramanayagam
Publisher: John Wiley & Sons
ISBN: 0470501006
Category : Computers
Languages : en
Pages : 348
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Book Description
A timely text on the recent developments in data storage, from a materials perspective Ever-increasing amounts of data storage on hard disk have been made possible largely due to the immense technological advances in the field of data storage materials. Developments in Data Storage: Materials Perspective covers the recent progress and developments in recording technologies, including the emerging non-volatile memory, which could potentially become storage technologies of the future. Featuring contributions from experts around the globe, this book provides engineers and graduate students in materials science and electrical engineering a solid foundation for grasping the subject. The book begins with the basics of magnetism and recording technology, setting the stage for the following chapters on existing methods and related research topics. These chapters focus on perpendicular recording media to underscore the current trend of hard disk media; read sensors, with descriptions of their fundamental principles and challenges; and write head, which addresses the advanced concepts for writing data in magnetic recording. Two chapters are devoted to the highly challenging area in hard disk drives of tribology, which deals with reliability, corrosion, and wear-resistance of the head and media. Next, the book provides an overview of the emerging technologies, such as heat-assisted magnetic recording and bit-patterned media recording. Non-volatile memory has emerged as a promising alternative storage option for certain device applications; two chapters are dedicated to non-volatile memory technologies such as the phase-change and the magnetic random access memories. With a strong focus on the fundamentals along with an overview of research topics, Developments in Data Storage is an ideal reference for graduate students or beginners in the field of magnetic recording. It also serves as an invaluable reference for future storage technologies including non-volatile memories.
Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 273
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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Panagiotis Dimitrakis
Publisher: Elsevier
ISBN: 0128146303
Category : Technology & Engineering
Languages : en
Pages : 534
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Book Description
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Author: Yuan Xie
Publisher: Springer Science & Business Media
ISBN: 144199551X
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
