DRAM (Dynamic Random Access Memory) Process Flow

DRAM (Dynamic Random Access Memory) Process Flow PDF Author: Kung Linliu
Publisher:
ISBN:
Category :
Languages : en
Pages : 55

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Book Description
DRAM is abbreviation of Dynamic Random Access Memory. DRAM is volatile memory electronic devices such as personal computer, cell phone, pad, etc. DRAM (Dynamic Random Access Memory) becomes an important component for a device is after the Bill Gates and Paul Allen found Microsoft Corporation which makes the personal computer software operation system DOS (disk operation system) in 1975. Personal computer industry is booming after Apple Incorporation and Microsoft Corporation have launched the personal computer and computer operation system to this world.

DRAM (Dynamic Random Access Memory) Process Flow

DRAM (Dynamic Random Access Memory) Process Flow PDF Author: Kung Linliu
Publisher:
ISBN:
Category :
Languages : en
Pages : 55

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Book Description
DRAM is abbreviation of Dynamic Random Access Memory. DRAM is volatile memory electronic devices such as personal computer, cell phone, pad, etc. DRAM (Dynamic Random Access Memory) becomes an important component for a device is after the Bill Gates and Paul Allen found Microsoft Corporation which makes the personal computer software operation system DOS (disk operation system) in 1975. Personal computer industry is booming after Apple Incorporation and Microsoft Corporation have launched the personal computer and computer operation system to this world.

Cross Section of DRAM (Dynamic Random Access Memory)

Cross Section of DRAM (Dynamic Random Access Memory) PDF Author: Kung Linliu
Publisher:
ISBN:
Category :
Languages : en
Pages : 38

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Book Description
A detailed cross section of DRAM is presented in this book. DRAM is abbreviation of Dynamic Random Access Memory. DRAM is volatile memory used for electronic devices such as personal computer, cell phone, pad, etc. DRAM (Dynamic Random Access Memory) becomes an important component for electronic devices is after Bill Gates and Paul Allen found Microsoft Corporation which makes the personal computer software operation system DOS (disk operation system) in 1975.Nowadays, the memory unit is improved and has a lot of progress from K (kilobyte or KB) to G (gigabyte or GB). The DRAM memory IC is a key component of personal computer and the price of it is lower than that of the CPU IC.

Dram-Dynamic Random Access Memory

Dram-Dynamic Random Access Memory PDF Author: Kung Linliu
Publisher:
ISBN: 9781729479346
Category :
Languages : en
Pages : 186

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Book Description
Author: Kung Linliu, Ph. D.DRAM (Dynamic Random Access Memory) becomes an important component for a device is after the Bill Gates and Paul Allen found Microsoft Corporation which makes the personal computer software operation system DOS (disk operation system) in 1975. Bill was only 20 years old young man and Paul was 22 years old at the time of company start up.Apple personal computer is almost founded at the same time. Steven Jobs was 21 years old at the time of Apple Incorporation was founded in 1976.Personal computer industry is booming after Apple Incorporation and Microsoft Corporation have launched the personal computer and computer operation system to this world.Nowadays, the memory unit is improved and has a lot of progress from K (kilobyte or KB) to G (gigabyte or GB). The DRAM memory IC is a key component of personal computer and the price of it is lower than that of the CPU IC.

Dynamic RAM

Dynamic RAM PDF Author: Muzaffer A. Siddiqi
Publisher: CRC Press
ISBN: 1439893756
Category : Computers
Languages : en
Pages : 382

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Book Description
Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs. Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges. Topics Include: DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research Various types of leakages and power consumption reduction methods in active and sleep mode Various types of SAs and yield enhancement techniques employing ECC and redundancy A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.

ULSI Semiconductor Technology Atlas

ULSI Semiconductor Technology Atlas PDF Author: Chih-Hang Tung
Publisher: John Wiley & Sons
ISBN: 9780471457725
Category : Technology & Engineering
Languages : en
Pages : 688

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Book Description
More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs

Encapsulation Technologies for Electronic Applications

Encapsulation Technologies for Electronic Applications PDF Author: Haleh Ardebili
Publisher: William Andrew
ISBN: 0128119799
Category : Technology & Engineering
Languages : en
Pages : 508

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Book Description
Encapsulation Technologies for Electronic Applications, Second Edition, offers an updated, comprehensive discussion of encapsulants in electronic applications, with a primary emphasis on the encapsulation of microelectronic devices and connectors and transformers. It includes sections on 2-D and 3-D packaging and encapsulation, encapsulation materials, including environmentally friendly 'green' encapsulants, and the properties and characterization of encapsulants. Furthermore, this book provides an extensive discussion on the defects and failures related to encapsulation, how to analyze such defects and failures, and how to apply quality assurance and qualification processes for encapsulated packages. In addition, users will find information on the trends and challenges of encapsulation and microelectronic packages, including the application of nanotechnology. Increasing functionality of semiconductor devices and higher end used expectations in the last 5 to 10 years has driven development in packaging and interconnected technologies. The demands for higher miniaturization, higher integration of functions, higher clock rates and data, and higher reliability influence almost all materials used for advanced electronics packaging, hence this book provides a timely release on the topic. Provides guidance on the selection and use of encapsulants in the electronics industry, with a particular focus on microelectronics Includes coverage of environmentally friendly 'green encapsulants' Presents coverage of faults and defects, and how to analyze and avoid them

Handbook of Thin Film Deposition

Handbook of Thin Film Deposition PDF Author: Krishna Seshan
Publisher: William Andrew
ISBN: 0128123125
Category : Technology & Engineering
Languages : en
Pages : 470

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Book Description
Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries Features a new chapter discussing Gates Dielectrics

CMOS IC Layout

CMOS IC Layout PDF Author: Dan Clein
Publisher: Elsevier
ISBN: 9780080502113
Category : Technology & Engineering
Languages : en
Pages : 288

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Book Description
This book includes basic methodologies, review of basic electrical rules and how they apply, design rules, IC planning, detailed checklists for design review, specific layout design flows, specialized block design, interconnect design, and also additional information on design limitations due to production requirements. *Practical, hands-on approach to CMOS layout theory and design *Offers engineers and technicians the training materials they need to stay current in circuit design technology. *Covers manufacturing processes and their effect on layout and design decisions

How Transistor Area Shrank by 1 Million Fold

How Transistor Area Shrank by 1 Million Fold PDF Author: Howard Tigelaar
Publisher: Springer Nature
ISBN: 3030400212
Category : Science
Languages : en
Pages : 334

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Book Description
​This book explains in layman’s terms how CMOS transistors work. The author explains step-by-step how CMOS transistors are built, along with an explanation of the purpose of each process step. He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail.

DRAMS (Dynamic Random Access Memory Semiconductors) of One Megabit and Above from Taiwan, Inv. 731-TA-811 (Final)

DRAMS (Dynamic Random Access Memory Semiconductors) of One Megabit and Above from Taiwan, Inv. 731-TA-811 (Final) PDF Author:
Publisher: DIANE Publishing
ISBN: 1457824078
Category :
Languages : en
Pages : 41

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Book Description